李泓緯
Hung-Wei Li

PhD Student

École polytechnique fédérale de Lausanne, Switzerland

關於我：

With expertise in materials science, semiconductor physics, and electrochemistry, I focus on advancing electronic devices that bridge fundamental research with real-world applications. My PhD research centers on developing multilayer ferroelectric and antiferroelectric capacitors and 2D ferroelectric FETs (FeFETs) for energy-efficient memory and neuromorphic computing applications.

Core strengths:
- Advanced experience in thin-film and 2D material device fabrication, materials/electrical characterization, and electrochemical analysis for high-performance nanoelectronic devices.
- Expertise in designing FeFET and AFeFET architectures for multifunctional memory, logic-in-memory computing, and neuromorphic hardware implementations.
- Skilled in scientific writing, data analysis, and project management, with a strong record of impactful research dissemination.
- Proven ability to work in collaborative, multidisciplinary teams, bridging academia and industry to push the boundaries of next-generation microelectronics.

I am passionate about contributing to sustainable, energy-efficient neuromorphic hardware, leveraging ferroelectric and 2D material-based devices to enable computing architectures that go beyond the limits of conventional CMOS technology.